THRESHOLD VOLTAGE MODEL OF ESFI-SOS-MOS TRANSISTORS

[1] INVESTIGATION OF SILICON-SAPPHIRE INTERFACE USING MIS CAPACITANCE METHOD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) : 63 - 65

[2] GOODMANN AM, 1976, IEEE SOS TECHNOLOGY

[3] THIN-FILM SILICON-ON-SAPPHIRE DEEP DEPLETION MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 855 - +

[4] FABRICATION AND PROPERTIES OF ESFI-SOS-MOSTS SUITABLE FOR BOTH LOW-VOLTAGE AND LOW-POWER CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 868 - 872

[5] IMPLANT DOSE PROFILE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4514 - 4519

[6] NISHI Y, 1976, ESSCIRC TOULOUSE

[7] Preuss E., 1976, Siemens Forschungs- und Entwicklungsberichte, V5, P338

[8] TIHANYI J, COMMUNICATION

[1] INVESTIGATION OF SILICON-SAPPHIRE INTERFACE USING MIS CAPACITANCE METHOD [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) : 63 - 65

[2] GOODMANN AM, 1976, IEEE SOS TECHNOLOGY

[3] THIN-FILM SILICON-ON-SAPPHIRE DEEP DEPLETION MOS TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 855 - +

[4] FABRICATION AND PROPERTIES OF ESFI-SOS-MOSTS SUITABLE FOR BOTH LOW-VOLTAGE AND LOW-POWER CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 868 - 872

[5] IMPLANT DOSE PROFILE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4514 - 4519

[6] NISHI Y, 1976, ESSCIRC TOULOUSE

[7] Preuss E., 1976, Siemens Forschungs- und Entwicklungsberichte, V5, P338

[8] TIHANYI J, COMMUNICATION