FABRICATION AND PROPERTIES OF ESFI-SOS-MOSTS SUITABLE FOR BOTH LOW-VOLTAGE AND LOW-POWER CIRCUITS

被引：5

作者：

KRANZER, D ^{[1
]}

PREUSS, E ^{[1
]}

SCHLUTER, K ^{[1
]}

FICHTNER, W ^{[1
]}

机构：

[1] VIENNA TECH UNIV,A-1040 VIENNA,AUSTRIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 08期

关键词：

D O I：

10.1109/T-ED.1978.19193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and the properties of ESFI-SOS p-channel deep-depletion and n-channel inversion transistors are discussed. These devices are aimed to be used in integrated circuits with both low supply voltage and low power consumption. It turns out that certain device parameters such as reverse current, leakage current, threshold voltage, and channel mobility are strongly correlated and that a proper set of process parameters (e.g., optimum process temperature, ion implantation dose, and implantation energy) exists permitting device fabrication most suitable to meet the goal mentioned above. Furthermore, the subthreshold behavior is investigated experimentally and theoretically and the density of fast interface states at the SiO2 -Si interface is determined. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：868 / 872

页数：5

共 9 条

[1] DOMINGOS H, 1976, FAARD7662 US AIR FOR
[2] 2-DIMENSIONAL MODELING OF SOS TRANSISTORS
FICHTNER, W
[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1978, 2 (02): : 47 - 51
[3] INVESTIGATION OF SILICON-SAPPHIRE INTERFACE USING MIS CAPACITANCE METHOD
GOODMAN, AM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) : 63 - 65
[4] HAMEL G, 1977, SEP ESSCIRC 77 ULM
[5] THRESHOLD VOLTAGE MODEL OF ESFI-SOS-MOS TRANSISTORS
KRANZER, D
SCHLUTER, K
TAKACS, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (08) : 890 - 894
[6] SUB-THRESHOLD BEHAVIOR OF ESFI-SOS TRANSISTORS
KRANZER, D
FICHTNER, W
[J]. ELECTRONICS LETTERS, 1978, 14 (06) : 161 - 162
[7] Preuss E., 1976, Siemens Forschungs- und Entwicklungsberichte, V5, P338
[8] PREUSS E, 1978, SOLID STATE DEVICES, P7
[9] ION-IMPLANTED COMPLEMENTARY MOS-TRANSISTORS IN LOW-VOLTAGE CIRCUITS
SWANSON, RM
MEINDL, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 146 - +

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