ELECTRON-PARAMAGNETIC-RES OF DEFECTS IN SILICON-ON-INSULATOR STRUCTURES FORMED BY ION-IMPLANTATION .1. O+ IMPLANTATION

被引：26

作者：

BARKLIE, RC ^{[1
]}

HOBBS, A ^{[1
]}

HEMMENT, PLF ^{[1
]}

REESON, K ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 32期

关键词：

D O I：

10.1088/0022-3719/19/32/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6417 / 6432

页数：16

共 49 条

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