STRAIN BROADENING OF THE DANGLING-BOND RESONANCE AT THE (111)SI-SIO2 INTERFACE

被引：94

作者：

BROWER, KL

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.33.4471

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4471 / 4478

页数：8

共 33 条

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