EPR TECHNIQUES FOR STUDYING DEFECTS IN SILICON

被引：16

作者：

BROWER, KL ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1977年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.1134971

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：135 / 141

页数：7

相关论文

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[7] ELECTRON PARAMAGNETIC RESONANCE OF ION-IMPLANTED DONORS IN SILICON
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[8] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON
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[9] DEPTH DISTRIBUTION OF EPR CENTERS IN 400-KEV O+ ION-IMPLANTED SILICON
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[10] BUCKMASTER HA, 1966, REV SCI INSTRUM, V43, P554

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