DEPTH DISTRIBUTION OF EPR CENTERS IN 400-KEV O+ ION-IMPLANTED SILICON

[1] ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 103 - &

[2] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &

[3] BROWER KL, TO BE PUBLISHED

[4] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[5] CORBETT JW, 1966, SOLID STATE PHYSI S7, P80

[6] ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (08) : 267 - &

[7] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1963, 132 (02): : 648 - &

[8] PARTITION OF AVERAGE ENERGY DEPOSITED IN SILICON AS A FUNCTION OF INCIDENT NEUTRON ENERGY [J]. PHYSICAL REVIEW, 1967, 155 (02): : 211 - +

[9] ENERGY DEPENDENCE OF NEUTRON DAMAGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 204 - +

[10] DEPTH DISTRIBUTION OF DIVACANCIES IN 400-KEV O+ ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 106 - &

[1] ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 103 - &

[2] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &

[3] BROWER KL, TO BE PUBLISHED

[4] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

[5] CORBETT JW, 1966, SOLID STATE PHYSI S7, P80

[6] ELECTRON PARAMAGNETIC RESONANCE IN ION IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (08) : 267 - &

[7] SPIN-1 CENTERS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1963, 132 (02): : 648 - &

[8] PARTITION OF AVERAGE ENERGY DEPOSITED IN SILICON AS A FUNCTION OF INCIDENT NEUTRON ENERGY [J]. PHYSICAL REVIEW, 1967, 155 (02): : 211 - +

[9] ENERGY DEPENDENCE OF NEUTRON DAMAGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 204 - +

[10] DEPTH DISTRIBUTION OF DIVACANCIES IN 400-KEV O+ ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 106 - &