ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON

[1] BANBURY PC, 1968, RAD EFFECTS SEMICOND, P280

[2] BAUERLEIN R, 1962, RAD DAMAGE SOLIDS, P358

[3] BEEZHOLD W, 1971, B AM PHYS SOC, V16, P835

[4] BERTOLOTTI M, 1968, RADIATION EFFECTS SE, P311

[5] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[6] ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 103 - &

[7] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[8] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[9] Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031

[10] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &

[1] BANBURY PC, 1968, RAD EFFECTS SEMICOND, P280

[2] BAUERLEIN R, 1962, RAD DAMAGE SOLIDS, P358

[3] BEEZHOLD W, 1971, B AM PHYS SOC, V16, P835

[4] BERTOLOTTI M, 1968, RADIATION EFFECTS SE, P311

[5] Brice D. K., 1970, Radiation Effects, V6, P77, DOI 10.1080/00337577008235048

[6] ION IMPLANTATION DEPTH DISTRIBUTIONS - ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 103 - &

[7] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[8] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[9] Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031

[10] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &