ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON

被引：89

作者：

BROWER, KL

BEEZHOLD, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 08期

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D O I：

10.1063/1.1661743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3499 / &

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[35] WIT JGD, 1971, ION IMPLANTATION SEM, P39
[36] [No title captured]

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