ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN BORON-IMPLANTED INTRINSIC SILICON

被引：17

作者：

BEEZHOLD, W ^{[1
]}

BROWER, KL ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1973年 / NS20卷 / 06期

关键词：

D O I：

10.1109/TNS.1973.4327395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：209 / 213

页数：5

共 25 条

[1]

BEEZHOLD W, 1973, JUN P INT C ION BEAM

[2]

Borders J. A., 1970, Radiation Effects, V6, P135, DOI 10.1080/00337577008235056

[3]

BORDERS JA, PRIVATE COMMUNICATIO

[4]

BRICE DK, PRIVATE COMMUNICATIO

[5]

BRICE DK, 1973, SLA730230 SAND LAB R

[6]

BRICE DK, 1971, ION IMPLANTATION

[7] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[8] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[9]

Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031

[10] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J].

BROWER, KL ;

VOOK, FL ;

BORDERS, JA .

APPLIED PHYSICS LETTERS, 1969, 15 (07) :208-&

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