TOTAL DOSE RADIATION HARDNESS OF MOS DEVICES IN HERMETIC CERAMIC PACKAGES

被引：49

作者：

KOHLER, RA

KUSHNER, RA

LEE, KH

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

D O I：

10.1109/23.25486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1492 / 1496

页数：5

共 14 条

[1] GROWTH AND ANNEALING OF TRAPPED HOLES AND INTERFACE STATES USING TIME-DEPENDENT BIASES [J].

FREITAG, RK ;

DOZIER, CM ;

BROWN, DB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1172-1177

[2] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].

GRISCOM, DL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2524-2533

[3] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS [J].

GRUNTHANER, FJ ;

GRUNTHANER, PJ ;

MASERJIAN, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1462-1466

[4] CORRELATION BETWEEN MECHANICAL-STRESS AND HYDROGEN-RELATED EFFECTS ON RADIATION-INDUCED DAMAGE IN MOS STRUCTURES [J].

KASAMA, K ;

TSUKIJI, M ;

KOBAYASHI, K .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1202-1207

[5] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].

LAI, SK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546

[6] RADIATION HARD 10 MU-M CMOS TECHNOLOGY [J].

LEE, KH ;

DESKO, JC ;

KOHLER, RA ;

LAWRENCE, CW ;

NAGY, WJ ;

SHIMER, JA ;

STEENWYK, SD ;

ANDERSON, RE ;

FU, JS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1460-1463

[7] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1651-1657

[8] CHARACTERIZATION OF ANNEALING OF CO-60 GAMMA-RAY DAMAGE AT THE SI/SIO2 INTERFACE [J].

SABNIS, AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4094-4099

[9] THE ROLE OF HYDROGEN IN RADIATION-INDUCED DEFECT FORMATION IN POLYSILICON GATE MOS DEVICES [J].

SCHWANK, JR ;

FLEETWOOD, DM ;

WINOKUR, PS ;

DRESSENDORFER, PV ;

TURPIN, DC ;

SANDERS, DT .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1152-1158

[10] PHYSICAL-MECHANISMS CONTRIBUTING TO DEVICE REBOUND [J].

SCHWANK, JR ;

WINOKUR, PS ;

MCWHORTER, PJ ;

SEXTON, FW ;

DRESSENDORFER, PV ;

TURPIN, DC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1434-1438

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