INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES

[1] RADIATION-INDUCED TRAPPING CENTERS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) : 31 - 47

[2] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[3] AVALANCHE INJECTION OF HOLES INTO SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134

[4] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[5] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[6] DECLERCK G, 1974, J APPL PHYS, V45, P2593, DOI 10.1063/1.1663634

[7] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[8] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[9] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[10] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1534 - 1539

[1] RADIATION-INDUCED TRAPPING CENTERS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 40 (1-3) : 31 - 47

[2] ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1196 - 1198

[3] AVALANCHE INJECTION OF HOLES INTO SIO2 [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134

[4] ELECTRON TRAPPING IN ELECTRON-BEAM IRRADIATED SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3386 - 3391

[5] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[6] DECLERCK G, 1974, J APPL PHYS, V45, P2593, DOI 10.1063/1.1663634

[7] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[8] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[9] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[10] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1534 - 1539