INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES

被引：394

作者：

LAI, SK ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2540 / 2546

页数：7

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