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INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES
被引:394
作者
:
LAI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LAI, SK
[
1
]
机构
:
[1]
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
来源
:
JOURNAL OF APPLIED PHYSICS
|
1983年
/ 54卷
/ 05期
关键词
:
D O I
:
10.1063/1.332323
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2540 / 2546
页数:7
相关论文
共 40 条
[31]
THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
SUGANO, T
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(04)
: 2889
-
2896
[32]
THE ORIGIN AND NATURE OF SILICON BAND-GAP STATES AT THE SI-SIO2 INTERFACE
SINGH, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
SINGH, J
MADHUKAR, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
MADHUKAR, A
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(11)
: 884
-
886
[33]
EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON SI-INSULATED GATE FETS (5 KV MOS E/T)
SPETH, AJ
论文数:
0
引用数:
0
h-index:
0
SPETH, AJ
FANG, FF
论文数:
0
引用数:
0
h-index:
0
FANG, FF
[J].
APPLIED PHYSICS LETTERS,
1965,
7
(06)
: 145
-
&
[34]
A STUDY OF OXIDE TRAPS AND INTERFACE STATES OF THE SILICON-SILICON DIOXIDE INTERFACE
STIVERS, AR
论文数:
0
引用数:
0
h-index:
0
STIVERS, AR
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
: 6292
-
6304
[35]
EXCITON TRANSPORT IN SIO2 AS A POSSIBLE CAUSE OF SURFACE-STATE GENERATION IN MOS STRUCTURES
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
WEINBERG, ZA
RUBLOFF, GW
论文数:
0
引用数:
0
h-index:
0
RUBLOFF, GW
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(03)
: 184
-
186
[36]
HOLE INJECTION AND TRANSPORT IN SIO2-FILMS ON SI
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WEINBERG, ZA
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(08)
: 437
-
439
[37]
2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
WINOKUR, PS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
BOESCH, HE
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCGARRITY, JM
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCLEAN, FB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3492
-
3494
[38]
COMPARISON OF INTERFACE-STATE BUILDUP IN MOS CAPACITORS SUBJECTED TO PENETRATING AND NONPENETRATING RADIATION
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
WINOKUR, PS
SOKOLOSKI, MM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
SOKOLOSKI, MM
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(10)
: 627
-
630
[39]
HOLE TRAPS IN SILICON DIOXIDE
WOODS, MH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
WOODS, MH
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
WILLIAMS, R
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
: 1082
-
1089
[40]
ZAININGER KH, 1967, RCA REV, V28, P208
←
1
2
3
4
→
共 40 条
[31]
THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES
SAKURAI, T
论文数:
0
引用数:
0
h-index:
0
SAKURAI, T
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
SUGANO, T
[J].
JOURNAL OF APPLIED PHYSICS,
1981,
52
(04)
: 2889
-
2896
[32]
THE ORIGIN AND NATURE OF SILICON BAND-GAP STATES AT THE SI-SIO2 INTERFACE
SINGH, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
SINGH, J
MADHUKAR, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
MADHUKAR, A
[J].
APPLIED PHYSICS LETTERS,
1981,
38
(11)
: 884
-
886
[33]
EFFECTS OF LOW-ENERGY ELECTRON IRRADIATION ON SI-INSULATED GATE FETS (5 KV MOS E/T)
SPETH, AJ
论文数:
0
引用数:
0
h-index:
0
SPETH, AJ
FANG, FF
论文数:
0
引用数:
0
h-index:
0
FANG, FF
[J].
APPLIED PHYSICS LETTERS,
1965,
7
(06)
: 145
-
&
[34]
A STUDY OF OXIDE TRAPS AND INTERFACE STATES OF THE SILICON-SILICON DIOXIDE INTERFACE
STIVERS, AR
论文数:
0
引用数:
0
h-index:
0
STIVERS, AR
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
JOURNAL OF APPLIED PHYSICS,
1980,
51
(12)
: 6292
-
6304
[35]
EXCITON TRANSPORT IN SIO2 AS A POSSIBLE CAUSE OF SURFACE-STATE GENERATION IN MOS STRUCTURES
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
WEINBERG, ZA
RUBLOFF, GW
论文数:
0
引用数:
0
h-index:
0
RUBLOFF, GW
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(03)
: 184
-
186
[36]
HOLE INJECTION AND TRANSPORT IN SIO2-FILMS ON SI
WEINBERG, ZA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WEINBERG, ZA
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(08)
: 437
-
439
[37]
2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
WINOKUR, PS
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
BOESCH, HE
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCGARRITY, JM
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
Harry Diamond Laboratories, U.S. Army Electronics Research and Development Command, Adelphi
MCLEAN, FB
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(05)
: 3492
-
3494
[38]
COMPARISON OF INTERFACE-STATE BUILDUP IN MOS CAPACITORS SUBJECTED TO PENETRATING AND NONPENETRATING RADIATION
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
WINOKUR, PS
SOKOLOSKI, MM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
SOKOLOSKI, MM
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(10)
: 627
-
630
[39]
HOLE TRAPS IN SILICON DIOXIDE
WOODS, MH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
WOODS, MH
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
WILLIAMS, R
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
: 1082
-
1089
[40]
ZAININGER KH, 1967, RCA REV, V28, P208
←
1
2
3
4
→