A STUDY OF OXIDE TRAPS AND INTERFACE STATES OF THE SILICON-SILICON DIOXIDE INTERFACE

被引：50

作者：

STIVERS, AR

SAH, CT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 12期

关键词：

D O I：

10.1063/1.327617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6292 / 6304

页数：13

共 38 条

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