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REVISED MODEL FOR OXIDATION OF SI BY OXYGEN
被引:101
作者
:
BLANC, J
论文数:
0
引用数:
0
h-index:
0
BLANC, J
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1978年
/ 33卷
/ 05期
关键词
:
D O I
:
10.1063/1.90409
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:424 / 426
页数:3
相关论文
共 11 条
[1]
BLANC J, UNPUBLISHED
[2]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[3]
KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY
[J].
GHEZ, R
论文数:
0
引用数:
0
h-index:
0
GHEZ, R
;
VANDERME.YJ
论文数:
0
引用数:
0
h-index:
0
VANDERME.YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(08)
:1100
-+
[4]
THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
;
BREECE, JM
论文数:
0
引用数:
0
h-index:
0
BREECE, JM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:982
-&
[5]
EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE
[J].
GRUNTHANER, FJ
论文数:
0
引用数:
0
h-index:
0
GRUNTHANER, FJ
;
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
MASERJIAN, J
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2108
-2112
[6]
THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
[J].
HOPPER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
HOPPER, MA
;
CLARKE, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
CLARKE, RA
;
YOUNG, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
YOUNG, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
:1216
-1222
[7]
Silicon Oxidation Studies: The Role of H2O
[J].
Irene, E. A.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Irene, E. A.
;
Ghez, R.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Ghez, R.
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(11)
:1757
-1761
[8]
SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
VANDERMEULEN, YJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(09)
:1380
-1384
[9]
PERMEATION OF GASEOUS OXYGEN THROUGH VITREOUS SILICA
[J].
NORTON, FJ
论文数:
0
引用数:
0
h-index:
0
NORTON, FJ
.
NATURE,
1961,
191
(478)
:701
-&
[10]
REPULSIVE FORCES IN RELATION TO BOND ENERGIES, DISTANCES AND OTHER PROPERTIES
[J].
PITZER, KS
论文数:
0
引用数:
0
h-index:
0
PITZER, KS
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1948,
70
(06)
:2140
-2145
←
1
2
→
共 11 条
[1]
BLANC J, UNPUBLISHED
[2]
GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
.
JOURNAL OF APPLIED PHYSICS,
1965,
36
(12)
:3770
-&
[3]
KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY
[J].
GHEZ, R
论文数:
0
引用数:
0
h-index:
0
GHEZ, R
;
VANDERME.YJ
论文数:
0
引用数:
0
h-index:
0
VANDERME.YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(08)
:1100
-+
[4]
THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON
[J].
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
;
BREECE, JM
论文数:
0
引用数:
0
h-index:
0
BREECE, JM
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
:982
-&
[5]
EXPERIMENTAL-OBSERVATIONS OF CHEMISTRY OF SIO2-SI INTERFACE
[J].
GRUNTHANER, FJ
论文数:
0
引用数:
0
h-index:
0
GRUNTHANER, FJ
;
MASERJIAN, J
论文数:
0
引用数:
0
h-index:
0
MASERJIAN, J
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2108
-2112
[6]
THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
[J].
HOPPER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
HOPPER, MA
;
CLARKE, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
CLARKE, RA
;
YOUNG, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA
YOUNG, L
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(09)
:1216
-1222
[7]
Silicon Oxidation Studies: The Role of H2O
[J].
Irene, E. A.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Irene, E. A.
;
Ghez, R.
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
Ghez, R.
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(11)
:1757
-1761
[8]
SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
[J].
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IRENE, EA
;
VANDERMEULEN, YJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
VANDERMEULEN, YJ
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(09)
:1380
-1384
[9]
PERMEATION OF GASEOUS OXYGEN THROUGH VITREOUS SILICA
[J].
NORTON, FJ
论文数:
0
引用数:
0
h-index:
0
NORTON, FJ
.
NATURE,
1961,
191
(478)
:701
-&
[10]
REPULSIVE FORCES IN RELATION TO BOND ENERGIES, DISTANCES AND OTHER PROPERTIES
[J].
PITZER, KS
论文数:
0
引用数:
0
h-index:
0
PITZER, KS
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1948,
70
(06)
:2140
-2145
←
1
2
→