THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY

被引：134

作者：

HOPPER, MA ^{[1
]}

CLARKE, RA ^{[1
]}

YOUNG, L ^{[1
]}

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECTR ENGN,VANCOUVER 8,BRITISH COLUMBI,CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134428

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1216 / 1222

页数：7

共 26 条

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[7]

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[8] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON [J].

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[9]

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