RADIATION HARD 10 MU-M CMOS TECHNOLOGY

被引：26

作者：

LEE, KH ^{[1
]}

DESKO, JC ^{[1
]}

KOHLER, RA ^{[1
]}

LAWRENCE, CW ^{[1
]}

NAGY, WJ ^{[1
]}

SHIMER, JA ^{[1
]}

STEENWYK, SD ^{[1
]}

ANDERSON, RE ^{[1
]}

FU, JS ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1460 / 1463

页数：4

共 8 条

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[3]

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[5]

Hillenius S. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P252

[6]

Lee K., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P242

[7] PROCESS DEPENDENT BUILDUP OF INTERFACE STATES IN IRRADIATED N-CHANNEL MOSFETS [J].

SABNIS, AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3905-3910

[8] CORRELATING THE RADIATION RESPONSE OF MOS CAPACITORS AND TRANSISTORS [J].

WINOKUR, PS ;

SCHWANK, JR ;

MCWHORTER, PJ ;

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TURPIN, DC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1453-1460

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