SIMULATION OF WORST-CASE TOTAL DOSE RADIATION EFFECTS IN CMOS VLSI CIRCUITS

被引：14

作者：

BHUVA, BL ^{[1
]}

PAULOS, JJ ^{[1
]}

DIEHL, SE ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1546 / 1550

页数：5

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[10] THE EFFECT OF OPERATING FREQUENCY IN THE RADIATION-INDUCED BUILDUP OF TRAPPED HOLES AND INTERFACE STATES IN MOS DEVICES [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :3982-3987

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