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CORRELATING THE RADIATION RESPONSE OF MOS CAPACITORS AND TRANSISTORS
被引:356
作者
:
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
SCHWANK, JR
论文数:
0
引用数:
0
h-index:
0
SCHWANK, JR
MCWHORTER, PJ
论文数:
0
引用数:
0
h-index:
0
MCWHORTER, PJ
DRESSENDORFER, PV
论文数:
0
引用数:
0
h-index:
0
DRESSENDORFER, PV
TURPIN, DC
论文数:
0
引用数:
0
h-index:
0
TURPIN, DC
机构
:
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1984年
/ 31卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1984.4333529
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1453 / 1460
页数:8
相关论文
共 24 条
[1]
TEMPERATURE-DEPENDENT AND FIELD-DEPENDENT CHARGE RELAXATION IN SIO2 GATE INSULATORS
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(03)
:1012
-1016
[2]
SUB-THRESHOLD BEHAVIOR OF UNIFORMLY AND NONUNIFORMLY DOPED LONG-CHANNEL MOSFET
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BREWS, JR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(09)
:1282
-1291
[3]
FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS
[J].
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
CHANG, CC
;
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
JOHNSON, WC
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(10)
:1249
-1255
[4]
GATE-WIDTH DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS IN METAL-SIO2/SI DEVICES
[J].
CHIN, MR
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
CHIN, MR
;
MA, TP
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
MA, TP
.
APPLIED PHYSICS LETTERS,
1983,
42
(10)
:883
-885
[5]
PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS
[J].
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
DERBENWICK, GF
;
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GREGORY, BL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
:2151
-2156
[6]
VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY
[J].
EERNISSE, EP
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
EERNISSE, EP
;
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
DERBENWICK, GF
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
:1534
-1539
[7]
HYDROGEN MIGRATION UNDER AVALANCHE INJECTION OF ELECTRONS IN SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS
[J].
GALE, R
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
GALE, R
;
FEIGL, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
FEIGL, FJ
;
MAGEE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
MAGEE, CW
;
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
YOUNG, DR
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(12)
:6938
-6942
[8]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
[J].
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
;
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
.
APPLIED PHYSICS LETTERS,
1966,
8
(02)
:31
-&
[9]
GRISWOLD TW, 1978 GOV MICR APPL C, V2, P398
[10]
A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS
[J].
GROESENEKEN, G
论文数:
0
引用数:
0
h-index:
0
GROESENEKEN, G
;
MAES, HE
论文数:
0
引用数:
0
h-index:
0
MAES, HE
;
BELTRAN, N
论文数:
0
引用数:
0
h-index:
0
BELTRAN, N
;
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
DEKEERSMAECKER, RF
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(01)
:42
-53
←
1
2
3
→
共 24 条
[1]
TEMPERATURE-DEPENDENT AND FIELD-DEPENDENT CHARGE RELAXATION IN SIO2 GATE INSULATORS
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(03)
:1012
-1016
[2]
SUB-THRESHOLD BEHAVIOR OF UNIFORMLY AND NONUNIFORMLY DOPED LONG-CHANNEL MOSFET
[J].
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
BREWS, JR
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(09)
:1282
-1291
[3]
FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS
[J].
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
CHANG, CC
;
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECH RES INST, HSINCHU, TAIWAN
JOHNSON, WC
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(10)
:1249
-1255
[4]
GATE-WIDTH DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS IN METAL-SIO2/SI DEVICES
[J].
CHIN, MR
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
CHIN, MR
;
MA, TP
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520
MA, TP
.
APPLIED PHYSICS LETTERS,
1983,
42
(10)
:883
-885
[5]
PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS
[J].
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
DERBENWICK, GF
;
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GREGORY, BL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
:2151
-2156
[6]
VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY
[J].
EERNISSE, EP
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
EERNISSE, EP
;
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
DERBENWICK, GF
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
:1534
-1539
[7]
HYDROGEN MIGRATION UNDER AVALANCHE INJECTION OF ELECTRONS IN SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS
[J].
GALE, R
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
GALE, R
;
FEIGL, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
FEIGL, FJ
;
MAGEE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
MAGEE, CW
;
YOUNG, DR
论文数:
0
引用数:
0
h-index:
0
机构:
RCA CORP LABS,PRINCETON,NJ 08540
YOUNG, DR
.
JOURNAL OF APPLIED PHYSICS,
1983,
54
(12)
:6938
-6942
[8]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
[J].
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
;
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
.
APPLIED PHYSICS LETTERS,
1966,
8
(02)
:31
-&
[9]
GRISWOLD TW, 1978 GOV MICR APPL C, V2, P398
[10]
A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS
[J].
GROESENEKEN, G
论文数:
0
引用数:
0
h-index:
0
GROESENEKEN, G
;
MAES, HE
论文数:
0
引用数:
0
h-index:
0
MAES, HE
;
BELTRAN, N
论文数:
0
引用数:
0
h-index:
0
BELTRAN, N
;
DEKEERSMAECKER, RF
论文数:
0
引用数:
0
h-index:
0
DEKEERSMAECKER, RF
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(01)
:42
-53
←
1
2
3
→