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TOTAL DOSE HARDNESS ASSURANCE FOR MICROCIRCUITS FOR SPACE ENVIRONMENT

被引：30
作者：
BUCHMAN, P
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1109/TNS.1986.4334604
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1352 / 1358
页数：7
相关论文
共 6 条
[1]   DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].
GRISCOM, DL .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2524-2533
[2]   SUPER RECOVERY OF TOTAL DOSE DAMAGE IN MOS DEVICES [J].
JOHNSTON, AH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1427-1453
[3]   SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
MCWHORTER, PJ ;
WINOKUR, PS .
APPLIED PHYSICS LETTERS, 1986, 48 (02) :133-135
[4]  
PALKUTI LJ, 1986, DNA AEROSPACE WORKSH
[5]   PHYSICAL-MECHANISMS CONTRIBUTING TO DEVICE REBOUND [J].
SCHWANK, JR ;
WINOKUR, PS ;
MCWHORTER, PJ ;
SEXTON, FW ;
DRESSENDORFER, PV ;
TURPIN, DC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1434-1438
[6]   ELECTRON-MOBILITY IN INVERSION AND ACCUMULATION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].
SUN, SC ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1497-1508
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