SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：643

作者：

MCWHORTER, PJ

WINOKUR, PS

机构：

[1] Sandia Natl Lab, Albuquerque, NM,, USA, Sandia Natl Lab, Albuquerque, NM, USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：133 / 135

页数：3

共 13 条

[1] BREWS JR, 1981, APPL SOLID STATE SCI, P31
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[3] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION
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[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 50 - 52
[4] RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 195 - &
[5] NEGATIVE BIAS STRESS OF MOS DEVICES AT HIGH ELECTRIC-FIELDS AND DEGRADATION OF MNOS DEVICES
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 2004 - 2014
[6] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS
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FAHRNER, WR
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1471 - 1478
[7] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES
LAI, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2540 - 2546
[8] HOLE TRAPS AND TRIVALENT SILICON CENTERS IN METAL-OXIDE SILICON DEVICES
LENAHAN, PM
DRESSENDORFER, PV
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3495 - 3499
[9] COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS
MA, TP
SCOGGAN, G
LEONE, R
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 61 - 63
[10] MULLER RS, 1977, DEVICE ELECTRONICS I, P358

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