NEGATIVE BIAS STRESS OF MOS DEVICES AT HIGH ELECTRIC-FIELDS AND DEGRADATION OF MNOS DEVICES

被引：566

作者：

JEPPSON, KO ^{[1
]}

SVENSSON, CM ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, ELECTR RES LAB, S-40220 GOTHENBURG 5, SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.323909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2004 / 2014

页数：11

相关论文

共 24 条

[1] ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, pCH29
[2] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS
BECKMANN, KH
HARRICK, NJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 614 - &
[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[4] Cricchi J. R., 1971, 9th annual proceedings reliability physics 1971, P1, DOI 10.1109/IRPS.1971.362483
[5] CRICCHI JR, 1975 IEDM TECH DIG, P459
[6] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[7] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES
GOETZBER.A
LOPEZ, AD
STRAIN, RJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 90 - 96
[8] WATER CONTAMINATION IN THERMAL OXIDE ON SILICON
HOLMBERG, GL
KUPER, AB
MIRALDI, FD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 677 - +
[9] RADIATION-INDUCED SURFACE STATES IN MOS DEVICES
KJAR, RA
NICHOLS, DK
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2193 - 2196
[10] KOOI E, 1965, PHILIPS RES REP, V20, P528