SUPER RECOVERY OF TOTAL DOSE DAMAGE IN MOS DEVICES

[1] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247

[2] ANNEALING OF TOTAL DOSE DAMAGE IN THE Z80A-MICROPROCESSOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4251 - 4255

[3] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[4] Mead C., 1980, INTRO VLSI SYSTEMS

[5] IRRADIATED SILICON GATE MOS DEVICE BIAS ANNEALING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4100 - 4104

[6] ANNEALING OF MOS CAPACITORS WITH IMPLICATIONS FOR TEST PROCEDURES TO DETERMINE RADIATION HARDNESS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4088 - 4094

[7] PREDICTING CMOS INVERTER RESPONSE IN NUCLEAR AND SPACE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4326 - 4332

[8] WINOKUR PS, 1982, IEEE T NUCL SCI, V29, P2102

[9] FIELD-DEPENDENT AND TIME-DEPENDENT RADIATION EFFECTS AT SIO2-SI INTERFACE OF HARDENED MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2113 - 2118

[10] INTERFACE-STATE GENERATION IN RADIATION-HARD OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1647 - 1650

[1] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247

[2] ANNEALING OF TOTAL DOSE DAMAGE IN THE Z80A-MICROPROCESSOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4251 - 4255

[3] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[4] Mead C., 1980, INTRO VLSI SYSTEMS

[5] IRRADIATED SILICON GATE MOS DEVICE BIAS ANNEALING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4100 - 4104

[6] ANNEALING OF MOS CAPACITORS WITH IMPLICATIONS FOR TEST PROCEDURES TO DETERMINE RADIATION HARDNESS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4088 - 4094

[7] PREDICTING CMOS INVERTER RESPONSE IN NUCLEAR AND SPACE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4326 - 4332

[8] WINOKUR PS, 1982, IEEE T NUCL SCI, V29, P2102

[9] FIELD-DEPENDENT AND TIME-DEPENDENT RADIATION EFFECTS AT SIO2-SI INTERFACE OF HARDENED MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2113 - 2118

[10] INTERFACE-STATE GENERATION IN RADIATION-HARD OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1647 - 1650