ANNEALING OF TOTAL DOSE DAMAGE IN THE Z80A-MICROPROCESSOR

被引：5

作者：

JOHNSTON, AH

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4251 / 4255

页数：5

共 8 条

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[3]

PRUITT TL, 1978, IEEE T NUCL SCI, V25, P2105

[4] UNIFIED MODEL OF DAMAGE ANNEALING IN CMOS, FROM FREEZE-IN TO TRANSIENT ANNEALING [J].

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GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2157-2162

[5] TOTAL DOSE-RESPONSE OF THE Z80A AND Z8002 MICROPROCESSORS [J].

WILL, WE ;

MARKS, KA ;

JOHNSTON, AH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4046-4050

[6] ANNEALING OF MOS CAPACITORS WITH IMPLICATIONS FOR TEST PROCEDURES TO DETERMINE RADIATION HARDNESS [J].

WINOKUR, PS ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4088-4094

[7]

WINOKUR PS, 1982, IEEE T NUCL SCI, V29, P2102

[8] INTERFACE-STATE GENERATION IN RADIATION-HARD OXIDES [J].

WINOKUR, PS ;

BOESCH, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1647-1650

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