ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS

[1] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[3] TEMPERATURE-DEPENDENT AND FIELD-DEPENDENT CHARGE RELAXATION IN SIO2 GATE INSULATORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (03) : 1012 - 1016

[4] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[5] CURTIS OL, 1977, J APPL PHYS, V48, P3819, DOI 10.1063/1.324248

[6] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[7] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1216 - 1225

[8] HUGHES G, COMMUNICATION

[9] MOS HARDNESS CHARACTERIZATION AND ITS DEPENDENCE UPON SOME PROCESS AND MEASUREMENT VARIABLES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1569 - 1572

[10] TIME-RESOLVED HOLE TRANSPORT IN ALPHA-SIO2 [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2012 - 2020

[1] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[3] TEMPERATURE-DEPENDENT AND FIELD-DEPENDENT CHARGE RELAXATION IN SIO2 GATE INSULATORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (03) : 1012 - 1016

[4] FREQUENCY AND TEMPERATURE TESTS FOR LATERAL NONUNIFORMITIES IN MIS CAPACITORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1249 - 1255

[5] CURTIS OL, 1977, J APPL PHYS, V48, P3819, DOI 10.1063/1.324248

[6] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[7] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1216 - 1225

[8] HUGHES G, COMMUNICATION

[9] MOS HARDNESS CHARACTERIZATION AND ITS DEPENDENCE UPON SOME PROCESS AND MEASUREMENT VARIABLES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1569 - 1572

[10] TIME-RESOLVED HOLE TRANSPORT IN ALPHA-SIO2 [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2012 - 2020