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MOS HARDNESS CHARACTERIZATION AND ITS DEPENDENCE UPON SOME PROCESS AND MEASUREMENT VARIABLES
被引:16
作者
:
HUGHES, GW
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
HUGHES, GW
[
1
]
POWELL, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
POWELL, RJ
[
1
]
机构
:
[1]
RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1976年
/ 23卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1976.4328541
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1569 / 1572
页数:4
相关论文
共 9 条
[1]
4 PARAMETERS MODEL THAT FITS DEGRADATION CURVE DELTAVG(VG) OF MOS-TRANSISTORS UNDER IRRADIATION
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ESTEVE, D
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ENEA, G
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MARTINEZ, A
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0
引用数:
0
h-index:
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MARTINEZ, A
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(09)
: 1029
-
&
[2]
PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
DERBENWICK, GF
GREGORY, BL
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0
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0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GREGORY, BL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
: 2151
-
2156
[3]
PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS
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0
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SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GREGORY, BL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
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(06)
: 2295
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[4]
EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
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IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IRENE, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
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: 1613
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1616
[5]
VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2
POWELL, RJ
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POWELL, RJ
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
DERBENWICK, GF
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1971,
NS18
(06)
: 99
-
+
[6]
POWELL RJ, 1975, N0001474C0185 CONTR
[7]
POWELL RJ, 1976, JUL IEEE ANN C NUCL
[8]
VISWANATHAN CR, 1976, JUL IEEE ANN C NUCL
[9]
HOLE TRAPS IN SILICON DIOXIDE
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0
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0
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RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
WOODS, MH
WILLIAMS, R
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0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
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[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
: 1082
-
1089
←
1
→
共 9 条
[1]
4 PARAMETERS MODEL THAT FITS DEGRADATION CURVE DELTAVG(VG) OF MOS-TRANSISTORS UNDER IRRADIATION
BUXO, J
论文数:
0
引用数:
0
h-index:
0
BUXO, J
ESTEVE, D
论文数:
0
引用数:
0
h-index:
0
ESTEVE, D
ENEA, G
论文数:
0
引用数:
0
h-index:
0
ENEA, G
MARTINEZ, A
论文数:
0
引用数:
0
h-index:
0
MARTINEZ, A
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(09)
: 1029
-
&
[2]
PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
DERBENWICK, GF
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GREGORY, BL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
: 2151
-
2156
[3]
PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
SANDIA LABS, ALBUQUERQUE, NM 87115 USA
GREGORY, BL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1975,
22
(06)
: 2295
-
2302
[4]
EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IRENE, EA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1613
-
1616
[5]
VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2
POWELL, RJ
论文数:
0
引用数:
0
h-index:
0
POWELL, RJ
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
DERBENWICK, GF
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1971,
NS18
(06)
: 99
-
+
[6]
POWELL RJ, 1975, N0001474C0185 CONTR
[7]
POWELL RJ, 1976, JUL IEEE ANN C NUCL
[8]
VISWANATHAN CR, 1976, JUL IEEE ANN C NUCL
[9]
HOLE TRAPS IN SILICON DIOXIDE
WOODS, MH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
WOODS, MH
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
WILLIAMS, R
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(03)
: 1082
-
1089
←
1
→