SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES

[1] DEVELOPMENT OF AN MOS DOSIMETRY UNIT FOR USE IN SPACE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1607 - 1612

[2] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[3] AUSMAN GA, 1975, HDLTR1720 HARR DIAM

[4] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[5] PREDICTION AND MEASUREMENT OF RADIATION-DAMAGE TO CMOS DEVICES ON BOARD SPACECRAFT [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1781 - 1788

[6] DANCHENKO V, COMMUNICATION

[7] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247

[8] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[9] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[10] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293

[1] DEVELOPMENT OF AN MOS DOSIMETRY UNIT FOR USE IN SPACE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1607 - 1612

[2] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[3] AUSMAN GA, 1975, HDLTR1720 HARR DIAM

[4] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[5] PREDICTION AND MEASUREMENT OF RADIATION-DAMAGE TO CMOS DEVICES ON BOARD SPACECRAFT [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1781 - 1788

[6] DANCHENKO V, COMMUNICATION

[7] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247

[8] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[9] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[10] VISCOUS-FLOW OF THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293