CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS

[1] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[2] PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2295 - 2302

[3] HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1506 - 1512

[4] UNIFIED MODEL OF DAMAGE ANNEALING IN CMOS, FROM FREEZE-IN TO TRANSIENT ANNEALING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2157 - 2162

[5] RAPID ANNEALING IN IRRADIATED CMOS TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 172 - 178

[6] DETERMINING ENERGY-DISTRIBUTION OF PULSE-RADIATION-INDUCED CHARGE IN MOS STRUCTURES FROM RAPID ANNEALING MEASUREMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 282 - 290

[7] VANVALKENBERG ME, 1965, NETWORK ANALYSIS, pCH8

[1] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[2] PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2295 - 2302

[3] HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1506 - 1512

[4] UNIFIED MODEL OF DAMAGE ANNEALING IN CMOS, FROM FREEZE-IN TO TRANSIENT ANNEALING [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2157 - 2162

[5] RAPID ANNEALING IN IRRADIATED CMOS TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 172 - 178

[6] DETERMINING ENERGY-DISTRIBUTION OF PULSE-RADIATION-INDUCED CHARGE IN MOS STRUCTURES FROM RAPID ANNEALING MEASUREMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 282 - 290

[7] VANVALKENBERG ME, 1965, NETWORK ANALYSIS, pCH8