HOLE TRANSPORT AND RECOVERY CHARACTERISTICS OF SIO2 GATE INSULATORS

被引：107

作者：

MCLEAN, FB ^{[1
]}

BOESCH, HE ^{[1
]}

MCGARRITY, JM ^{[1
]}

机构：

[1] HARRY DIAMOND LABS, ADELPHI, MD 20783 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1506 / 1512

页数：7

相关论文

共 21 条

[1] POLARONS IN CRYSTALLINE AND NON-CRYSTALLINE MATERIALS
AUSTIN, IG
MOTT, NF
[J]. ADVANCES IN PHYSICS, 1969, 18 (71) : 41 - +
[2] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS
BOESCH, HE
MCLEAN, FB
MCGARRITY, JM
AUSMAN, GA
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167
[3] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K
BOESCH, HE
MCGARRITY, JM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525
[4] PHOTOEMISSION MEASUREMENTS OF VALENCE LEVELS OF AMORPHOUS SIO2
DISTEFANO, TH
EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1560 - +
[5] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES
HARARI, E
WANG, S
ROYCE, BSH
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1310 - 1317
[6] HOLE TRANSPORT IN MOS OXIDES
HUGHES, RC
EERNISSE, EP
STEIN, HJ
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2227 - 2233
[7] HUGHES RC, 1976, B AM PHYS SOC, V21, P404
[8] RAPID ANNEALING AND CHARGE INJECTION IN AL2O3 MIS CAPACITORS
MCLEAN, FB
BOESCH, HE
WINOKUR, PS
MCGARRITY, JM
OSWALD, RB
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 47 - 55
[9] APPLICATION OF STOCHASTIC HOPPING TRANSPORT TO HOLE CONDUCTION IN AMORPHOUS SIO-2
MCLEAN, FB
AUSMAN, GA
BOESCH, HE
MCGARRITY, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1529 - 1532
[10] RANDOM WALKS ON LATTICES .2.
MONTROLL, EW
WEISS, GH
[J]. JOURNAL OF MATHEMATICAL PHYSICS, 1965, 6 (02) : 167 - +