DEVELOPMENT OF AN MOS DOSIMETRY UNIT FOR USE IN SPACE

被引：59

作者：

ADAMS, L ^{[1
]}

HOLMESSIEDLE, A ^{[1
]}

机构：

[1] FULMER RES INST LTD,STOKE POGES SL2 4QD,SLOUGH,ENGLAND

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/TNS.1978.4329580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1607 / 1612

页数：6

共 16 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J].

AUBUCHON, KG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :117-+

[2] MOSFET DETECTOR EVALUATION [J].

CIARLO, DR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) :390-394

[3] METAL-OXIDE-SEMICONDUCTOR X-RAY DETECTORS [J].

CIARLO, DR ;

MAYEDA, K ;

BOSTER, TA ;

KALIBJIAN, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (01) :350-+

[4]

FREEMAN RFA, 1978, IEEE T NUCLEAR SCI, V25

[5]

GREGORY BL, 1975, IEEE T NUCL SCI, V22, P2296

[6] SPACE-CHARGE DOSIMETER - GENERAL PRINCIPLES OF A NEW METHOD OF RADIATION DETECTION [J].

HOLMESSI.A .

NUCLEAR INSTRUMENTS & METHODS, 1974, 121 (01) :169-179

[7] IMPROVING RADIATION TOLERANCE IN SPACE-BORN ELECTRONICS [J].

HOLMESSIEDLE, A ;

FREEMAN, RFA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2259-2265

[8]

HOLMESSIEDLE A, 1978, ESTEC287176NLHP CONT

[9] POSITIVE CHARGE TRAPS IN SILICON DIOXIDE FILMS - COMPARISON OF POPULATION BY X-RAYS AND BAND-GAP LIGHT [J].

HOLMESSIEDLE, AG ;

GROOMBRIDGE, I .

THIN SOLID FILMS, 1975, 27 (01) :165-170

[10]

HUBBELL JH, 1969, NSRDSNBS29 REP

← 1 2 →