IMPROVING RADIATION TOLERANCE IN SPACE-BORN ELECTRONICS

被引：5

作者：

HOLMESSIEDLE, A

FREEMAN, RFA

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/TNS.1977.4329203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2259 / 2265

页数：7

共 28 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J].

AUBUCHON, KG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :117-+

[2]

BERGER MJ, 1968, SP169 NAT AER SPAC A, P285

[3]

BERGER MJ, 1966, SP3036 NASA REP

[4] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1520-1525

[5]

BOSNELL JR, UNPUBLISHED

[6] RESULTS OF TELSTAR RADIATION EXPERIMENTS [J].

BROWN, WL ;

ROSENZWEIG, W ;

GABBE, JD .

BELL SYSTEM TECHNICAL JOURNAL, 1963, 42 (03) :1505-+

[7] RADIATION FAILURE MODES IN CMOS INTEGRATED-CIRCUITS [J].

BURGHARD, RA ;

GWYN, CW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :300-306

[8]

DAVIS HS, 1976, 33765 JET PROP LAB T

[9] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].

DERBENWICK, GF ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156

[10] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].

EERNISSE, EP ;

DERBENWICK, GF .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1534-1539

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