TOTAL DOSE FAILURE LEVELS OF SOME VLSICS

被引:2
作者
KING, EE [1 ]
MANZO, GJ [1 ]
机构
[1] IBM CORP,DIV FEDERAL SYST,MANASSAS,VA 22110
关键词
D O I
10.1109/TNS.1980.4331049
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1449 / 1451
页数:3
相关论文
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[3]   CONSIDERATIONS FOR HARDENING MOS DEVICES AND CIRCUITS FOR LOW RADIATION-DOSES [J].
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POSA J, 1980, ELECTRONICS MAY, P119