CONSIDERATIONS FOR HARDENING MOS DEVICES AND CIRCUITS FOR LOW RADIATION-DOSES

[1] RADIATION HARDENED FIELD OXIDE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2099 - 2101

[2] AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533

[3] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[4] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[5] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[6] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[7] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[8] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[9] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[10] DINNARD RH, 1979, IEEE T ELEC DEV, V26, P325

[1] RADIATION HARDENED FIELD OXIDE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2099 - 2101

[2] AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533

[3] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[4] ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2 [J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 173 - 175

[5] HOLE TRANSPORT AND CHARGE RELAXATION IN IRRADIATED SIO2 MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2163 - 2167

[6] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[7] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[8] HOLE AND ELECTRON-TRANSPORT IN SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4506 - 4513

[9] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[10] DINNARD RH, 1979, IEEE T ELEC DEV, V26, P325