INFLUENCE OF SILICON SURFACE DEFECTS ON MOS RADIATION-SENSITIVITY

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[2] TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1267 - 1277

[3] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[4] CHANG CC, 1976, THESIS PRINCETON U

[5] DEFECT GENERATION IN SILICON [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 677 - &

[6] FABULA J, 1976, N0001475C1101 CONTR

[7] NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 100 - 105

[8] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[9] PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2295 - 2302

[10] PRE-IRRADIATION INDICATOR FOR TOTAL-DOSE IONIZING RADIATION-SENSITIVITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (05) : 2118 - 2119

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +

[2] TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES [J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1267 - 1277

[3] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[4] CHANG CC, 1976, THESIS PRINCETON U

[5] DEFECT GENERATION IN SILICON [J]. METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 677 - &

[6] FABULA J, 1976, N0001475C1101 CONTR

[7] NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) : 100 - 105

[8] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[9] PROCESS-CONTROLS FOR RADIATION-HARDENED ALUMINUM GATE BULK SILICON CMOS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2295 - 2302

[10] PRE-IRRADIATION INDICATOR FOR TOTAL-DOSE IONIZING RADIATION-SENSITIVITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (05) : 2118 - 2119