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PRE-IRRADIATION INDICATOR FOR TOTAL-DOSE IONIZING RADIATION-SENSITIVITY
被引:4
作者
:
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
HUGHES, HL
[
1
]
机构
:
[1]
USN,RES LAB,WASHINGTON,DC 20375
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1975年
/ 22卷
/ 05期
关键词
:
D O I
:
10.1109/TNS.1975.4328074
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2118 / 2119
页数:2
相关论文
共 7 条
[1]
RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
论文数:
0
引用数:
0
h-index:
0
AUBUCHON, KG
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1971,
NS18
(06)
: 117
-
+
[2]
DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
HUGHES, HL
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
BAXTER, RD
PHILLIPS, B
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
PHILLIPS, B
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1972,
NS19
(06)
: 256
-
263
[3]
RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Naval Research Laboratory, Washington
HUGHES, HL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1969,
NS16
(06)
: 195
-
&
[4]
KANE PF, 1974, CHARACTERIZATION SOL, P20
[5]
EFFECTS OF GROWN-IN AND PROCESS-INDUCED DEFECTS IN SINGLE-CRYSTAL SILICON
POMERANTZ, DI
论文数:
0
引用数:
0
h-index:
0
POMERANTZ, DI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
: 255
-
+
[6]
SIRTL E, 1961, Z METALLKD, V52, P529
[7]
1974, STANDARD METHOD TEST
←
1
→
共 7 条
[1]
RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
论文数:
0
引用数:
0
h-index:
0
AUBUCHON, KG
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1971,
NS18
(06)
: 117
-
+
[2]
DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
HUGHES, HL
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
BAXTER, RD
PHILLIPS, B
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20390
PHILLIPS, B
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1972,
NS19
(06)
: 256
-
263
[3]
RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE
HUGHES, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Naval Research Laboratory, Washington
HUGHES, HL
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1969,
NS16
(06)
: 195
-
&
[4]
KANE PF, 1974, CHARACTERIZATION SOL, P20
[5]
EFFECTS OF GROWN-IN AND PROCESS-INDUCED DEFECTS IN SINGLE-CRYSTAL SILICON
POMERANTZ, DI
论文数:
0
引用数:
0
h-index:
0
POMERANTZ, DI
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(02)
: 255
-
+
[6]
SIRTL E, 1961, Z METALLKD, V52, P529
[7]
1974, STANDARD METHOD TEST
←
1
→