EFFECTS OF GROWN-IN AND PROCESS-INDUCED DEFECTS IN SINGLE-CRYSTAL SILICON

[1] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (114): : 1303 - &

[2] SOLUTE STRIATIONS IN CZOCHRALSKI-GROWN SILICON CRYSTALS - EFFECT OF CRYSTAL ROTATION AND GROWTH RATES [J]. APPLIED PHYSICS LETTERS, 1963, 3 (06) : 100 - 102

[3] SILICON CRYSTALS FREE OF DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) : 736 - 737

[4] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[5] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J]. CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) : 439 - 443

[6] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[7] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J]. ACTA METALLURGICA, 1966, 14 (10): : 1157 - &

[8] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[9] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[10] LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484

[1] 2-DIMENSIONAL DEFECTS IN SILICON AFTER ANNEALING IN WET OXYGEN [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (114): : 1303 - &

[2] SOLUTE STRIATIONS IN CZOCHRALSKI-GROWN SILICON CRYSTALS - EFFECT OF CRYSTAL ROTATION AND GROWTH RATES [J]. APPLIED PHYSICS LETTERS, 1963, 3 (06) : 100 - 102

[3] SILICON CRYSTALS FREE OF DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) : 736 - 737

[4] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) : 459 - 474

[5] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J]. CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) : 439 - 443

[6] FISHER AW, 1966, J ELECTROCHEM SOC, V113, P1054

[7] STACKING FAULTS IN STEAM-OXIDIZED SILICON [J]. ACTA METALLURGICA, 1966, 14 (10): : 1157 - &

[8] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[9] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 100 - &

[10] LAWRENCE JE, 1968, T METALL SOC AIME, V242, P484