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NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS
被引:19
作者
:
FAHRNER, WR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, E FISHKILL FACIL, Hopewell Jct, NY 12533 USA
IBM CORP, SYST PROD DIV, E FISHKILL FACIL, Hopewell Jct, NY 12533 USA
FAHRNER, WR
[
1
]
SCHNEIDER, CP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, E FISHKILL FACIL, Hopewell Jct, NY 12533 USA
IBM CORP, SYST PROD DIV, E FISHKILL FACIL, Hopewell Jct, NY 12533 USA
SCHNEIDER, CP
[
1
]
机构
:
[1]
IBM CORP, SYST PROD DIV, E FISHKILL FACIL, Hopewell Jct, NY 12533 USA
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1976年
/ 123卷
/ 01期
关键词
:
D O I
:
10.1149/1.2132738
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:100 / 105
页数:6
相关论文
共 8 条
[1]
ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 781
-
+
[2]
MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 785
-
+
[3]
HUANG JST, 1970, P IEEE, V58, P1489
[4]
DETERMINATION OF MINORITY CARRIER LIFETIME AND SURFACE RECOMBINATION VELOCITY FROM TRANSIENT-RESPONSE OF MOS CAPACITORS
KANO, Y
论文数:
0
引用数:
0
h-index:
0
KANO, Y
SHIBATA, A
论文数:
0
引用数:
0
h-index:
0
SHIBATA, A
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(08)
: 1161
-
+
[5]
ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
NATHANSON, HC
论文数:
0
引用数:
0
h-index:
0
NATHANSON, HC
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(05)
: 577
-
+
[6]
MEASURING LIFETIME OF MINORITY CARRIERS IN MIS STRUCTURES
TOMANEK, P
论文数:
0
引用数:
0
h-index:
0
TOMANEK, P
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(04)
: 301
-
+
[7]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
[8]
TN102 PRINC APPL RES
←
1
→
共 8 条
[1]
ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 781
-
+
[2]
MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 785
-
+
[3]
HUANG JST, 1970, P IEEE, V58, P1489
[4]
DETERMINATION OF MINORITY CARRIER LIFETIME AND SURFACE RECOMBINATION VELOCITY FROM TRANSIENT-RESPONSE OF MOS CAPACITORS
KANO, Y
论文数:
0
引用数:
0
h-index:
0
KANO, Y
SHIBATA, A
论文数:
0
引用数:
0
h-index:
0
SHIBATA, A
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1972,
11
(08)
: 1161
-
+
[5]
ON SEPARATION OF BULK AND SURFACE COMPONENTS OF LIFETIME USING PULSED MOS CAPACITOR
SCHRODER, DK
论文数:
0
引用数:
0
h-index:
0
SCHRODER, DK
NATHANSON, HC
论文数:
0
引用数:
0
h-index:
0
NATHANSON, HC
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(05)
: 577
-
+
[6]
MEASURING LIFETIME OF MINORITY CARRIERS IN MIS STRUCTURES
TOMANEK, P
论文数:
0
引用数:
0
h-index:
0
TOMANEK, P
[J].
SOLID-STATE ELECTRONICS,
1969,
12
(04)
: 301
-
+
[7]
ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30
[8]
TN102 PRINC APPL RES
←
1
→