ANNEALING OF MOS CAPACITORS WITH IMPLICATIONS FOR TEST PROCEDURES TO DETERMINE RADIATION HARDNESS

被引：32

作者：

WINOKUR, PS

BOESCH, HE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期

关键词：

D O I：

10.1109/TNS.1981.4335680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4088 / 4094

页数：7

共 18 条

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