ACTIVATION-ENERGIES OF THERMAL ANNEALING OF RADIATION-INDUCED DAMAGE IN NORMAL-CHANNELS AND PARA-CHANNELS OF CMOS INTEGRATED-CIRCUITS

被引：27

作者：

DANCHENKO, V

STASSINOPOULOS, EG

FANG, PH

BRASHEARS, SS

机构：

[1] BOSTON COLL,DEPT PHYS,CHESTNUT HILL,MA 02167

[2] SPACE SCI SERV,LAUREL,MD 20810

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/TNS.1980.4331085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1658 / 1664

页数：7

共 18 条

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[6] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J].

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[7] APPLICATIONS OF BACK REACTION-KINETICS IN DEFECT STRUCTURE-ANALYSIS [J].

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