A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[3] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[4] CURTIS OL, 1977, J APPL PHYS, V48, P3819, DOI 10.1063/1.324248

[5] Griscom D.L., 1978, PHYSICS SIO2 ITS INT, P232

[6] GRISCOM DL, UNPUBLISHED

[7] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

[8] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453

[9] GRUNTHANER FJ, 1980, JUN INT C PHYS MOS I

[10] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 749 - +

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1520 - 1525

[3] ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1239 - 1245

[4] CURTIS OL, 1977, J APPL PHYS, V48, P3819, DOI 10.1063/1.324248

[5] Griscom D.L., 1978, PHYSICS SIO2 ITS INT, P232

[6] GRISCOM DL, UNPUBLISHED

[7] HIGH-RESOLUTION X-RAY PHOTOELECTRON-SPECTROSCOPY AS A PROBE OF LOCAL ATOMIC-STRUCTURE - APPLICATION TO AMORPHOUS SIO2 AND THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (22) : 1683 - 1686

[8] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453

[9] GRUNTHANER FJ, 1980, JUN INT C PHYS MOS I

[10] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 749 - +