NOISE MEASUREMENTS IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BELOW SATURATION

[1] BOZIC SM, 1966, ELECTRON ENG, V38, P40

[2] JOHNSON H, 1966, FIELD EFFECT TRANSIS, P160

[3] JORDAN AG, 1965, IEEE T ELECTRON DEVI, VED12, P148

[4] NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1463 - &

[5] VASSEUR JP, 1964, PROPERTIES APPLICATI

[1] BOZIC SM, 1966, ELECTRON ENG, V38, P40

[2] JOHNSON H, 1966, FIELD EFFECT TRANSIS, P160

[3] JORDAN AG, 1965, IEEE T ELECTRON DEVI, VED12, P148

[4] NOISE PARAMETERS FOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1463 - &

[5] VASSEUR JP, 1964, PROPERTIES APPLICATI