OPTOELECTRONIC INTEGRATED-CIRCUITS

被引：44

作者：

FORREST, SR ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT ELECTROPHYS & MAT SCI,LOS ANGELES,CA 90089

来源：

PROCEEDINGS OF THE IEEE | 1987年 / 75卷 / 11期

关键词：

D O I：

10.1109/PROC.1987.13910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1488 / 1497

页数：10

共 35 条

[1] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].

BANDY, S ;

NISHIMOTO, C ;

HYDER, S ;

HOOPER, C .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819

[2]

BARCHAIM N, 1984, 7TH TOP M INT GUID W

[3] INTEGRATED DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS PHOTORECEIVER WITH AUTOMATIC GAIN-CONTROL [J].

BARNARD, J ;

OHNO, H ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1981, 2 (01) :7-9

[4] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J].

BLAUVELT, H ;

BARCHAIM, N ;

FEKETE, D ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :289-290

[5] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].

CHEMLA, DS ;

MILLER, DAB ;

SMITH, PW ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275

[6] INTERDIGITATED AL0.48IN0.52AS/GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS [J].

CHEN, CY ;

PANG, YM ;

ALAVI, K ;

CHO, AY ;

GARBINSKI, PA .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :99-101

[7]

CHEN CY, 1984, 7TH TOP M INT GUID W

[8] MONOLITHICALLY INTEGRATED IN0.53GA0.47AS/INP DIRECT-COUPLED JUNCTION FIELD-EFFECT TRANSISTOR-AMPLIFIER [J].

CHENG, J ;

GUTH, G ;

WASHINGTON, M ;

FORREST, SR ;

WUNDER, R .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :225-228

[9] DEPLETION AND ENHANCEMENT MODE IN0.53GA0.47AS/INP JUNCTION FIELD-EFFECT TRANSISTOR WITH A P+-INGAAS CONFINEMENT LAYER [J].

CHENG, J ;

FORREST, SR ;

STALL, R ;

GUTH, G ;

WUNDER, R .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :885-887

[10]

CHENG J, 1985, OPTICAL FIBER COMMUN, P92

← 1 2 3 4 →