DESIGN AND SYNTHESIS OF CVD PRECURSORS TO THIN-FILM CERAMIC MATERIALS

The application of cyclic organometallic compounds as single source precursors for the chemical vapor deposition of materials such as AIN and SiC is discussed and new results relating to the decomposition of a novel SiC CVD precursor are presented. The decomposition of the cyclic carbosilane [μ-(CH2)2Si(CH3)(H)Si(CH3)(CH2SiH2CH3)], (I) on a heated glassy carbon subst rate in an ultra-high vacuum molecular beam system has been studied by pulsing the precursor molecule onto the surface and following the mass spectrum as a function of the substrate surface temperature. The evolution of CH3SiH2, C2H5 and CH3 was evidenced, suggesting loss of excess carbon as C1 and C2 species. © 1990.