INFRARED REFLECTIVITY BY TRANSVERSE-OPTICAL PHONONS IN (GAAS)M/(ALAS)N ULTRATHIN-LAYER SUPERLATTICES

被引：32

作者：

SCAMARCIO, G

TAPFER, L

KONIG, W

FISCHER, A

PLOOG, K

MOLINARI, E

BARONI, S

GIANNOZZI, P

DEGIRONCOLI, S

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

[2] CNR,IST OM CORBINO,I-00189 ROME,ITALY

[3] SCUOLA INT SUPER STUDI AVANZATI,I-34014 TRIESTE,ITALY

[4] PHB ECUBLENS,INST ROMAND RECH NUMER PHYS MAT,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.43.14754

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report far-infrared reflectivity measurements on (GaAs)m/(AlAs)n superlattices (SL's) with systematically varied layer thicknesses in the range 1 less-than-or-equal-to m,n less-than-or-equal-to 7. Taking advantage of an appropriate choice of the total SL thickness D less-than-or-equal-to 0.3-mu-m, we measure the frequencies of AlAs-like TO1 confined phonons from the peak of the reststrahlen band. The GaAs-like TO1 frequencies are obtained by fitting reflectivity spectra to the SL dielectric-response-theory model. Microscopic calculations of confined TO frequencies are performed within an ab initio scheme and successfully compared with the experimental data.

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页码：14754 / 14757

页数：4

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