BLUE STIMULATED-EMISSION FROM A ZNSE P-N DIODE AT LOW-TEMPERATURE

被引：30

作者：

WANG, SY

HAUKSSON, I

SIMPSON, J

STEWART, H

ADAMS, SJA

WALLACE, JM

KAWAKAMI, Y

PRIOR, KA

CAVENETT, BC

机构：

[1] Department of Physics, Heriot-Watt University

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.107869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser diode structures have been fabricated using molecular beam epitaxy with iodine from an electrochemical source for the n-type doping and nitrogen from a plasma source for the p-type doping. CV profiling using electrochemical etching shows uniform p doping of 4 X 10(17) cm-3 and n doping of 1 x 10(18) cm-3. Under pulsed current excitation blue emission at 470 nm is observed at room temperature which increases in intensity at liquid helium temperatures. Above a current density threshold of 50 A cm-2 stimulated emission is observed between 448-473 nm with a complicated mode structure.

引用

收藏

页码：506 / 508

页数：3

相关论文

共 8 条

[1] BLUE-GREEN LASER-DIODES [J].

HAASE, MA ;

QIU, J ;

DEPUYDT, JM ;

CHENG, H .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1272-1274

[2] BLUE-GREEN INJECTION-LASER DIODES IN (ZN,CD)SE/ZNSE QUANTUM-WELLS [J].

JEON, H ;

DING, J ;

PATTERSON, W ;

NURMIKKO, AV ;

XIE, W ;

GRILLO, DC ;

KOBAYASHI, M ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1991, 59 (27) :3619-3621

[3] OPTICALLY PUMPED BLUE-GREEN LASER OPERATION ABOVE ROOM-TEMPERATURE IN ZN0.80CD0.20SE-ZNS0.08SE0.92 MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KAWAKAMI, Y ;

YAMAGUCHI, S ;

WU, YH ;

ICHINO, K ;

FUJITA, S ;

FUJITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A) :L605-L607

[4] EXTREMELY-LOW-THRESHOLD AND HIGH-TEMPERATURE OPERATION IN A PHOTOPUMPED ZNSE/ZNSSE BLUE LASER [J].

NAKANISHI, K ;

SUEMUNE, I ;

FUJII, Y ;

KURODA, Y ;

YAMANISHI, M .

APPLIED PHYSICS LETTERS, 1991, 59 (12) :1401-1403

[5] HEAVILY DOPED P-ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY [J].

QIU, J ;

DEPUYDT, JM ;

CHENG, H ;

HAASE, MA .

APPLIED PHYSICS LETTERS, 1991, 59 (23) :2992-2994

[6]

SIMPSON J, 1992, J CRYST GROWTH, V117, P320

[7] ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING OF N-TYPE MOLECULAR-BEAM EPITAXY ZNSE LAYERS [J].

WANG, SY ;

HARAN, F ;

SIMPSON, J ;

STEWART, H ;

WALLACE, JM ;

PRIOR, KA ;

CAVENETT, BC .

APPLIED PHYSICS LETTERS, 1992, 60 (03) :344-346

[8] LIGHT EMISSION AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL GAAS LASERS AND TUNNEL DIODES [J].

WINOGRADOFF, NN ;

KESSLER, HK .

SOLID STATE COMMUNICATIONS, 1964, 2 (04) :119-122