PRECISION ABSOLUTE MEASUREMENTS OF STRONG AND HIGHLY INHOMOGENEOUS MAGNETIC-FIELDS

被引：16

作者：

HONIG, A

MOROZ, M

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1978年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.1135379

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The low-temperature (∼4 K) dependence of the photoconductance in n-type silicon on the conduction electron and bound donor electron spin state serves as the basis of a high-precision, wide-range magnetic field measuring probe, which by virtue of its very small dimensions is well suited for spatial mapping of highly inhomogeneous fields produced by superconducting magnets. The probe may also be adapted to power and frequency measurement of microwave sources operating at ∼mW power levels and frequencies up to ∼500 GHz.

引用

页码：183 / 187

页数：5

共 10 条

[1] ELECTRON CAPTURE BY NEUTRAL DONORS IN N-TYPE GERMANIUM AND SILICON [J].