DEVICE DEPENDENCE OF CHARGING EFFECTS FROM HIGH-CURRENT ION-IMPLANTATION

被引：13

作者：

FELCH, SB ^{[1
]}

BASRA, VK ^{[1
]}

MCKENNA, CM ^{[1
]}

机构：

[1] VARIAN EXTRION DIV,GLOUCESTER,MA 01930

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期

关键词：

Semiconductor Materials--Charge Carriers;

D O I：

10.1109/16.8811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface charge buildup on insulated layers during ion implantation can lead to a degradation in the performance of MOS devices with thin gate oxides. In order to study this problem, a set of device structures with 130-angstrom-thick gate oxides has been designed. The breakdown characteristics of these structures after implantation are reported and analyzed to determine the dependency of implant charging damage on the specific device structure.

引用

页码：2338 / 2342

页数：5

共 7 条

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BASRA, VK ;

MCKENNA, CM ;

FELCH, SB .

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[2]

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MCKENNA, CM .

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[4]

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[5]

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[6]

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[7]

Yamabe K., 1983, 21st Annual Proceedings on Reliability Physics 1983, P184, DOI 10.1109/IRPS.1983.361982

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