A STUDY OF WAFER AND DEVICE CHARGING DURING HIGH-CURRENT ION-IMPLANTATION

被引：16

作者：

BASRA, VK ^{[1
]}

MCKENNA, CM ^{[1
]}

FELCH, SB ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,RES CTR,PALO ALTO,CA 94303

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90857-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：360 / 365

页数：6

共 11 条

[1]

FELCH SB, 1985, NOTES SILICON VALLEY

[2] HIGH-CURRENT DOSIMETRY TECHNIQUES [J].

MCKENNA, CM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4) :93-110

[3]

MCKENNA CM, 1983, SPRINGER SERIES ELEC, V12, P73

[4]

NICHOLAS KH, 1976, J PHYS D, V9, P393

[5] A NEW COMPUTER DESIGNED FARADAY SYSTEM FOR HIGH-CURRENT ION-IMPLANTATION SYSTEMS [J].

OUTCAULT, R ;

MCKENNA, C ;

ROBERTSON, T ;

BIONDO, L .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :354-359

[6]

RAICU B, 1983, SPRINGER SERIES ELEC, V11, P450

[7]

RUPPRECHT HS, 1978, Patent No. 4076558

[8] A NEW DOSE CONTROL TECHNIQUE FOR ION-IMPLANTATION [J].

RYDING, G ;

FARLEY, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01) :295-303

[9]

WHITE N, 1985, SOLID STATE TECHNOL, V28, P151

[10]

Wilson R.G., 1973, ION BEAMS

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