A NEW DOSE CONTROL TECHNIQUE FOR ION-IMPLANTATION

被引:10
作者
RYDING, G
FARLEY, M
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 189卷 / 01期
关键词
D O I
10.1016/0029-554X(81)90158-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:295 / 303
页数:9
相关论文
共 12 条
[1]   DESIGN PHILOSOPHY FOR A 200 KV INDUSTRIAL HIGH-CURRENT ION IMPLANTER [J].
AITKEN, D .
NUCLEAR INSTRUMENTS & METHODS, 1976, 139 (DEC15) :125-134
[2]  
FREEMAN JH, 1970, P EUROP C ION IMPLAN, V1
[3]  
FREEMAN JH, 1970, P EUROP C ION IMPLAN, V36
[4]   SECONDARY PARTICLE COLLECTION IN ION-IMPLANTATION DOSE MEASUREMENT [J].
JAMBA, DM .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (05) :634-638
[5]  
JAMBA DM, 1977, NBS40049 REP
[6]  
KO WC, 1976, 7TH INT C EL ION BEA
[7]   DESIGN OF AN END STATION FOR A HIGH-CURRENT ION-IMPLANTATION SYSTEM [J].
KRANIK, JR .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4) :81-92
[8]   DIAGNOSTIC-TEST FOR ION-IMPLANTATION DOSIMETRY [J].
MATTESON, S ;
TONN, DG ;
NICOLET, MA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03) :882-883
[9]   HIGH-CURRENT DOSIMETRY TECHNIQUES [J].
MCKENNA, CM .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 44 (1-4) :93-110
[10]   ROTATING SCAN FOR ION-IMPLANTATION [J].
ROBERTSON, GI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :796-800