EXTENDED CURVES OF SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT SURFACE OF A SEMICONDUCTOR, AND CURVES OF ELECTROSTATIC POTENTIAL INSIDE A SEMICONDUCTOR

被引：71

作者：

YOUNG, CE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1961年 / 32卷 / 03期

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D O I：

10.1063/1.1736007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：329 / &

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共 3 条

[1] CALCULATIONS ON THE SHAPE AND EXTENT OF SPACE CHARGE REGIONS IN SEMICONDUCTOR SURFACES [J].

DOUSMANIS, GC ;

DUNCAN, RC .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1627-1629

[2] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].

KINGSTON, RH ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720

[3] THEORETICAL SURFACE CONDUCTIVITY CHANGES AND SPACE CHARGE IN GERMANIUM AND SILICON [J].

MOWERY, VO .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1753-1757