RADIATIVE COMPLEX FORMATION IN VAPOR-PHASE EPITAXIAL GAP

被引：5

作者：

BLOM, GM

BHARGAVA, RN

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1972年 / 17卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(72)90229-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：38 / +

页数：1

共 26 条

[1] STACKING FAULTS IN GAAS1-XPX ALLOYS [J].

ABRAHAMS, MS ;

TIETJEN, JJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) :2491-&

[2] TWINS AND STACKING FAULTS IN VAPOR GROWN GAAS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (06) :927-&

[3]

[Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[4] SPECTROSCOPIC OBSERVATION OF A VACANCY COMPLEX IN GAP [J].

BHARGAVA, RN ;

KURTZ, SK ;

VINK, AT ;

PETERS, RC .

PHYSICAL REVIEW LETTERS, 1971, 27 (04) :183-+

[5] MG-O COMPLEXES IN GAP - YELLOW DIODE [J].

BHARGAVA, RN ;

BRONNES, RL ;

KURTZ, SK ;

LUPATKIN, WL ;

MICHEL, C .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :227-&

[6]

BHARGAVA RN, 1970, P INT C PHYS SEMICON, P642

[7] SINGLE CRYSTAL ELECTROLUMINESCENT MATERIALS [J].

CASEY, HC ;

TRUMBORE, FA .

MATERIALS SCIENCE AND ENGINEERING, 1970, 6 (02) :69-+

[8] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :374-&

[9] LUMINESCENT CENTRE VGA-OP IN GAP - FURTHER EVIDENCE [J].

DEAN, PJ .

SOLID STATE COMMUNICATIONS, 1971, 9 (24) :2211-&

[10] ISOELECTRONIC TRAP LI-LI-O IN GAP [J].

DEAN, PJ .

PHYSICAL REVIEW B, 1971, 4 (08) :2596-&

← 1 2 3 →